Solar Lattice

Symptom

Non-uniform EL pattern

ID
symptom:el-nonuniform-pattern
IRI
https://solarlattice.org/kb/symptom/el-nonuniform-pattern
Status
active
Also known as
patchwork pattern

A non-uniform EL pattern is cell-to-cell or area-to-area variation in luminescence across a module, seen in electroluminescence images taken in the dark or at night while the module is forward-biased with a DC supply. In crystalline silicon modules, a patchwork pattern that grows over time can sometimes indicate ongoing light-induced degradation (LID or LeTID), even though LID itself leaves no visible defect. LID mainly shows as a drop in STC power, short-circuit current and open-circuit voltage early in the system's life, so confirm it with IV curves or flash tests rather than with EL alone. Potential-induced degradation can also look patchy, but its typical sign is dark cells near the module frame, clearest at low current bias, and it is worse in modules near one pole of the string. Bright and dark areas inside cells, or a single dim cell, can instead come from production problems such as uneven firing or a poor busbar connection. A single EL image taken at one bias current often cannot identify the cause, so take images at two bias currents and combine them with IR thermography or photoluminescence. In the field, use IR thermography first to find the anomalous modules, then do EL on site or in a lab, and send suspected underperformance to an accredited test laboratory for confirmation.

<!-- review notes

Claims

observed_as

c1 drafted · lead Patchwork EL pattern

In crystalline silicon modules, EL images that grow less uniform over time (a patchwork pattern) can sometimes point to ongoing light-induced degradation (LID or LeTID).

Increasing non-uniformity of electroluminescence images (patchwork pattern) can in some cases highlight an ongoing degradation process.

c2 drafted · lead Dark cell edges in EL

This points to PID rather than LID. Cells near the module frame or boundary appear dark, most clearly at low current bias (one tenth of rated current).

review note: support check: partial - Passages say PID shows dark cells at module boundaries/near frame and is clearer at low bias (1/10 rated current), but do not compare it with LID or say such darkness 'points to PID rather than LID'.

c3 drafted · lead Lower EL intensity distribution

Modules with higher power loss tend to show a pixel-intensity histogram shifted toward lower EL intensity. This shift has not been clearly linked to any specific defect type.

c4 drafted · lead Dim cell in EL image

A single cell that is much dimmer than the others can come from a poor busbar connection. Bright and dark areas within a cell can come from uneven temperature during cell firing in production.

typical_power_loss

c5 drafted · lead 1–3 PERCENT

Conditions: LID (boron-oxygen related) in p-type crystalline silicon modules, occurring within the first days of sun exposure

c6 verified · fact ≤ 10 PERCENT

Conditions: LeTID in susceptible modules (first seen with PERC) at module temperatures above 50 °C, building up over years and adding to the LID loss

verified by: review-workflowverified on: 2026-10-20

c7 drafted · lead ≤ 30 PERCENT

Conditions: Light-induced degradation (light soaking effect) in general, as reported by one source

Referenced by

Data