In-line cell stabilization

The evidence provided does not describe in-line cell stabilization itself: how it is done, which equipment it uses, or how well it works. The failure mode it is linked to is Light Induced Degradation, a loss of cell and module power caused by exposure to light. In boron-doped cells the loss comes mainly from boron-oxygen complexes, and most of it typically happens within the first few hours of light exposure. Some susceptible modules show material stabilization effects after first exposure, so the guidance is to include stabilization in yield assumptions. Other listed measures are choosing low-LID module technologies and checking unexpected early losses with IV curve tracing and flash testing. Using gallium instead of boron as the dopant has greatly reduced LID, but boron impurities in the wafer can still cause some LID in gallium-doped and n-type cells.

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• sentence 3: support check: partial - B-O complexes as main mechanism and maximum degradation within the first few hours are stated, but 'most of it' is a paraphrase of 'maximum degradation', and it's not said specifically for boron-doped cells beyond the mechanism. -->